SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE

被引：7

作者：

CHENG, CL ^{[1
]}

LIAO, ASH ^{[1
]}

CHANG, TY ^{[1
]}

CARIDI, EA ^{[1
]}

COLDREN, LA ^{[1
]}

LALEVIC, B ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期

关键词：

D O I：

10.1109/EDL.1984.26008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 514

页数：4

共 11 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :174-176

[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

CHAI, YG ;

YEATS, R .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :252-254

[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, TY ;

LEHENY, RF ;

NAHORY, RE ;

SILBERG, E ;

BALLMAN, AA ;

CARIDI, EA ;

HARROLD, CJ .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :56-58

[5] SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS [J].

CHEN, CY ;

CHO, AY ;

ALAVI, K ;

GARBINSKI, PA .

ELECTRON DEVICE LETTERS, 1982, 3 (08) :205-208

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].

CHENG, CL ;

LIAO, ASH ;

CHANG, TY ;

LEHENY, RF ;

COLDREN, LA ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :169-171

[7]

GARDNER PD, 1983, P I PHYS C SER, V65, P399

[8] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[9] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J].

MORKOC, H ;

BANDY, SG ;

SANKARAN, R ;

ANTYPAS, GA ;

BELL, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :619-627

[10] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

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