AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY

被引：48

作者：

KUNII, Y

TABE, M

KAJIYAMA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.333958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：279 / 285

页数：7

共 10 条

[1]

Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[3]

CSEPREGI L, 1977, J APPL PHYS, V48, P4241

[4] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J].

DROSD, R ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :397-403

[5]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J].

KUNII, Y ;

TABE, M ;

KAJIYAMA, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2847-2849

[7] SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SI [J].

KUNII, Y ;

TABE, M ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10) :1431-1436

[8]

KUNII Y, 1983, JPN J APPL PHYS S1, V22, P605

[9] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J].

LIETOILA, A ;

WAKITA, A ;

SIGMON, TW ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4399-4405

[10]

VANVECHTEN JA, 1976, PHYS REV B, V14, P3553

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