RADIATION EFFECTS IN TASIX POLYSILICON MOS GATE STRUCTURES

被引：10

作者：

DRAPER, BL

MCKEON, DC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：723 / 729

页数：7

共 10 条

[1]

Anderson Roy, COMMUNICATION

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[4] STRESS IN SPUTTERED TASIX FILMS ON POLYCRYSTALLINE SILICON [J].

DRAPER, BL .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :863-865

[5]

DRAPER BW, UNPUB

[6] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].

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DERBENWICK, GF .

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[7]

ELKAREH B, 1978, J VAC SCI TECHNOL, V15, P1047, DOI 10.1116/1.569733

[8]

HALBLEIB JA, 1974, SLA731026 SAND NAT L

[9]

MCBRAYER JD, 1983, THESIS STANFORD U

[10] SOURCE OF RADIATION-DAMAGE TO MOS DEVICES DURING S-GUN METALLIZATION [J].

VOSSEN, JL ;

ONEILL, JJ ;

HUGHES, GW ;

TAFT, FA ;

SNEDEKER, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :400-402

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