EDGE-DEFINED SELF-ALIGNMENT OF SUBMICROMETER OVERLAID DEVICES

被引：3

作者：

MALHI, SDS

CHATTERJEE, PK

BONIFIELD, TD

LEISS, JE

CARTER, DE

PINIZZOTTO, RF

COLEMAN, DJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 10期

关键词：

D O I：

10.1109/EDL.1984.25973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：428 / 429

页数：2

共 7 条

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[4] EFFECTS OF GRAIN-BOUNDARY PASSIVATION ON THE CHARACTERISTICS OF PARA-CHANNEL MOSFETS IN LPCVD POLYSILICON [J].

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