THEORY OF HYDROGEN DIFFUSION AND REACTIONS IN CRYSTALLINE SILICON

被引:223
作者
VAN DE WALLE, CG
BARYAM, Y
PANTELIDES, ST
机构
关键词
D O I
10.1103/PhysRevLett.60.2761
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2761 / 2764
页数:4
相关论文
共 28 条
[1]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[2]   BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON [J].
BARANOWSKI, JM ;
TATARKIEWICZ, J .
PHYSICAL REVIEW B, 1987, 35 (14) :7450-7453
[3]   ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852
[4]  
BARYAM Y, 1985, J ELECTRON MATER A, V14, P261
[5]  
BEELER F, 1986, THESIS U STUTTGART
[6]   DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].
BERGMAN, K ;
STAVOLA, M ;
PEARTON, SJ ;
LOPATA, J .
PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773
[7]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[8]  
CAR R, 1985, J ELECTRON MATER A, V14, P269
[9]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[10]   ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J].
CORBETT, JW ;
SAHU, SN ;
SHI, TS ;
SNYDER, LC .
PHYSICS LETTERS A, 1983, 93 (06) :303-304