ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100)

被引:92
作者
KNESCHAUREK, P [1 ]
KAMGAR, A [1 ]
KOCH, JF [1 ]
机构
[1] TECH UNIV MUNCHEN, DEPT PHYS, D-8046 GARCHING, GERMANY
关键词
D O I
10.1103/PhysRevB.14.1610
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1610 / 1622
页数:13
相关论文
共 22 条
[1]  
ABSTREITER G, TO BE PUBLISHED
[2]   SUBBAND STRUCTURE OF AN ACCUMULATION LAYER UNDER STRONG MAGNETIC-FIELDS [J].
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (02) :411-417
[3]   DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].
ANDO, T .
PHYSICAL REVIEW B, 1976, 13 (08) :3468-3477
[4]  
BUBE RH, 1960, PHOTOCONDUCTIVITY
[5]   SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J].
FOWLER, AB .
PHYSICAL REVIEW LETTERS, 1975, 34 (01) :15-17
[6]   BEHAVIOR OF MOS INVERSION LAYERS AT LOW TEMPERATURE [J].
GOETZBER.A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :787-&
[7]  
GOETZBER.A, 1966, AT&T TECH J, V45, P1097
[8]  
GOLDBERG HS, 1974, P INT C SUBMILLIMETE
[9]   RESONANCE SPECTROSCOPY OF ELECTRONIC LEVELS IN A SURFACE ACCUMULATION LAYER [J].
KAMGAR, A ;
KNESCHAU.P ;
DORDA, G ;
KOCH, JF .
PHYSICAL REVIEW LETTERS, 1974, 32 (22) :1251-1254
[10]  
KAMGAR A, TO BE PUBLISHED