ION-IMPLANTATION FOR VERY LARGE-SCALE INTEGRATION

[1] AKASAKA Y, 1974, J JPN SOC APPL PHYS, V43, P493

[2] ALLEN SD, 1980, LASER ELECTR BEAM PR, P514

[3] HEAVY-ION SPUTTERING YIELD OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1919 - 1921

[4] ANDERSON CL, 1980, LASER ELECTR BEAM PR

[5] BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 813 - 819

[6] ANTONIADIS DA, 1978, 50192 STANF U TECH R

[7] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[8] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[9] AUBUCHON KG, 1969, INT C PROP USE MIS S

[10] HIGH-ENERGY IMPLANTATION OF BURIED INSULATING LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 217 - 220

[1] AKASAKA Y, 1974, J JPN SOC APPL PHYS, V43, P493

[2] ALLEN SD, 1980, LASER ELECTR BEAM PR, P514

[3] HEAVY-ION SPUTTERING YIELD OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1919 - 1921

[4] ANDERSON CL, 1980, LASER ELECTR BEAM PR

[5] BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 813 - 819

[6] ANTONIADIS DA, 1978, 50192 STANF U TECH R

[7] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[8] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[9] AUBUCHON KG, 1969, INT C PROP USE MIS S

[10] HIGH-ENERGY IMPLANTATION OF BURIED INSULATING LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 217 - 220