ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS

被引：81
作者：
BRINGANS, RD
HOCHST, H
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.25.1081
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：1081 / 1089
页数：9
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