INTERPRETATION OF THE TEMPERATURE-DEPENDENCE OF THE STRONG VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON

被引：17
|
作者：
FINKBEINER, S
WEBER, J
机构：
[1] Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart
来源：
THIN SOLID FILMS | 1995年 / 255卷 / 1-2期
关键词：
LUMINESCENCE; OPTICAL SPECTROSCOPY; SILICON;
D O I：
10.1016/0040-6090(94)05666-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The temperature dependence of the strong visible photoluminescence (550-850 nm) is studied in differently prepared porous silicon samples. The variation in the photoluminescence intensity with temperature is a result of a decrease in the radiative decay time and an increase in the non-radiative recombination process with increasing temperatures. The strong visible photoluminescence is interpreted by a recombination of singlet and triplet excitons. The singlet-triplet splitting is comparable for all samples but depends on the detection wavelength and on sample preparation. We present similar data for the recombination process in siloxene which supports the model of a common origin of the strong visible photoluminescence in these very differently prepared samples.
引用
收藏
页码：254 / 257
页数：4
相关论文
共 50 条
  • [31] INTERPRETATION OF TEMPERATURE-DEPENDENCE OF PARTITION AND STICKING COEFFICIENTS FOR ANTIMONY, PHOSPHORUS AND BORON IN SILICON
    BENNETT, RJ
    PARISH, C
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (18) : 2555 - 2564
  • [32] THE NATURE OF ANOMALOUS TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN GLASSES
    MALINOVSKY, VK
    NOVIKOV, VN
    SOKOLOV, AP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 453 - 456
  • [33] TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF MODIFIED INPSN CRYSTALS
    DZHUMAMUKHAMBETOV, NG
    DMITRIEV, AG
    SEMICONDUCTORS, 1993, 27 (04) : 356 - 357
  • [34] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE SPECTRA OF AGCL
    STULEN, RH
    ASCARELLI, G
    PHYSICAL REVIEW B, 1977, 15 (02): : 1161 - 1166
  • [35] TEMPERATURE-DEPENDENCE OF GAS CONDUCTANCE THROUGH POROUS SILICON-CARBIDE PLUGS
    LAWSON, RPW
    VACUUM, 1975, 25 (08) : 377 - 382
  • [36] Origin of emission from porous silicon: Temperature-dependence correlation with proton conductivity
    Zou, BS
    Wang, JP
    Liu, C
    Zhang, JZ
    El-Sayad, MA
    PHYSICAL REVIEW B, 2000, 62 (24) : 16595 - 16599
  • [37] The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon
    Bashchenko, SN
    Blonskii, IV
    Brodyn, MS
    Kadan, VN
    Skryshevskii, YG
    TECHNICAL PHYSICS, 2001, 46 (01) : 63 - 67
  • [38] The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon
    S. N. Bashchenko
    I. V. Blonskii
    M. S. Brodyn
    V. N. Kadan
    Yu. G. Skryshevskii
    Technical Physics, 2001, 46 : 63 - 67
  • [39] DEPENDENCE OF PHOTOLUMINESCENCE OF POROUS SILICON ON ANGLE OF RADIATION
    KIMURA, T
    NISHIDA, H
    TERUI, S
    SUZUKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 1895 - 1896
  • [40] Dependence of photoluminescence of porous silicon on angle of radiation
    Kimura, Tatsuya
    Nishida, Hidekuni
    Terui, Syusuke
    Suzuki, Takeo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 A): : 1895 - 1896
12345