IDENTIFICATION OF NEUTRAL BOND-CENTERED MUONIUM IN N-TYPE SEMICONDUCTORS BY LONGITUDINAL MUON-SPIN RELAXATION

被引：40

作者：

CHOW, KH

LICHTI, RL

KIEFL, RF

DUNSIGER, S

ESTLE, TL

HITTI, B

KADONO, R

MACFARLANE, WA

SCHNEIDER, JW

SCHUMANN, D

SHELLEY, M

机构：

[1] UNIV BRITISH COLUMBIA,VANCOUVER V6T 2A3,BC,CANADA

[2] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251

[3] RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

[4] UNIV ZURICH,INST PHYS,CH-8057 ZURICH,SWITZERLAND

[5] HAHN MEITNER INST BERLIN GMBH,D-14109 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.50.8918

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the longitudinal field-dependent muon-spin relaxation rate (T-1(-1)) in n-type Si and GaAs under conditions where coherent spin precession of muonium is unobservable. A peak in T-1(-1) as a function of magnetic field is observed and shown to be characteristic of neutral bond-centered muonium (Mu(BC)(0)) experiencing spin-exchange scattering with free carriers. These results establish that neutral Mu(BC)(0) does not convert to negatively charged muonium in n-type Si below approximately 200 K and is present in metallic n-type GaAs:Si at 5.5 K.

引用

页码：8918 / 8921

页数：4

共 20 条

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