FIELD-INDUCED REAL-SPACE TRANSFER IN DELTA-DOPED GAAS

被引：17

作者：

KOSTIAL, H ^{[1
]}

IHN, T ^{[1
]}

KLEINERT, P ^{[1
]}

HEY, R ^{[1
]}

ASCHE, M ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS,W-8046 GARCHING,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4485

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The differential conductivity in various systems of parallel delta layers in GaAs as a function of electric field shows a maximum with subsequent saturation at about 10 V/cm, which manifests itself also in the weak-field magnetoresistivity and Hall effect. The temperature behavior of the peculiarities in the differential conductivity has been studied and compared with results obtained from a balance equation approach to a square-well superlattice taking strict dynamical screening into account. Three effects due to carrier heating in the electric field turn out to be important. A real-space transfer of electrons into the region between the layers and the increase in the electron drift velocity lead to a strong rise of the differential conductivity at lower fields. When heating becomes more and more balanced by the emission of optical phonons the differential conductivity goes through a maximum and saturates.

引用

页码：4485 / 4490

页数：6

共 6 条

[1] MAGNETIC SEPARATION OF LOCALIZATION AND INTERACTION EFFECTS IN A TWO-DIMENSIONAL ELECTRON-GAS AT LOW-TEMPERATURES [J].