TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH INDUCED DEFECT LINES IN GAAS

被引：15

作者：

STEINER, T ^{[1
]}

THEWALT, MLW ^{[1
]}

KOTELES, ES ^{[1
]}

SALERNO, JP ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：257 / 259

页数：3

共 14 条

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[4] A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[5]

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[6] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7]

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[8]

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[9]

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[10] OBSERVATION OF DISCRETE DONOR-ACCEPTOR PAIR SPECTRA IN MBE GROWN GAAS [J].

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