PARTICLE LOCALIZATION AND PHONON SIDE-BAND IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS

被引：54

作者：

BRENER, I

OLSZAKIER, M

COHEN, E

EHRENFREUND, E

RON, A

PFEIFFER, L

机构：

[1] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL

[3] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.46.7927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

引用

页码：7927 / 7930

页数：4

共 20 条

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BASTARD G, 1988, WAE MECHANICS APPLIE

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