STRAIN-DEPENDENT DEFECT FORMATION KINETICS AND A CORRELATION BETWEEN FLAT-BAND VOLTAGE AND NITROGEN DISTRIBUTION IN THERMALLY NITRIDED SIOXNY/SI STRUCTURES

被引：102
作者：
VASQUEZ, RP
MADHUKAR, A
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期
关键词：
D O I：
10.1063/1.95956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：998 / 1000
页数：3
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