COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON

被引:158
作者
EDELSON, D
FLAMM, DL
机构
关键词
D O I
10.1063/1.334108
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1522 / 1531
页数:10
相关论文
共 38 条
[21]   GREENS FUNCTION METHOD OF SENSITIVITY ANALYSIS IN CHEMICAL-KINETICS [J].
HWANG, JT ;
DOUGHERTY, EP ;
RABITZ, S ;
RABITZ, H .
JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (11) :5180-5191
[22]   AN IMPROVED COMPUTATIONAL METHOD FOR SENSITIVITY ANALYSIS - GREENS-FUNCTION METHOD WITH AIM [J].
KRAMER, MA ;
CALO, JM ;
RABITZ, H .
APPLIED MATHEMATICAL MODELLING, 1981, 5 (06) :432-441
[23]   A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .1. A MODEL FOR THE ETCHING OF SI AND SIO2 IN CNFM/H2 AND CNFM/O2 PLASMAS [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2923-2938
[24]   2-ELECTRON GROUP MODEL AND ELECTRON-ENERGY BALANCE IN LOW-PRESSURE GAS-DISCHARGES [J].
LIGTHART, FAS ;
KEIJSER, RAJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5295-5299
[25]  
MARCOTTE RE, 1973, J FLUORINE CHEM, V2, P87
[26]   INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS [J].
MAYER, TM ;
BARKER, RA ;
WHITMAN, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :349-352
[27]  
MCDANIEL EW, 1973, MOBILITY DIFFUSION I, pCH1
[28]   2-ELECTRON-GROUP MODEL AND BOLTZMANN CALCULATIONS FOR LOW-PRESSURE GAS-DISCHARGES [J].
MORGAN, WL ;
VRIENS, L .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5300-5306
[29]   MOBILITY, DIFFUSION AND ATTACHMENT OF ELECTRONS IN PERFLUOROALKANES [J].
NAIDU, MS ;
PRASAD, AN .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (05) :983-&
[30]   RATE OF DECOMPOSITION OF HEXAFLUOROAZOMETHANE AND THE ABSOLUTE RATE OF RECOMBINATION OF TRIFLUOROMETHYL RADICAL AT HIGHER TEMPERATURES [J].
ROSSI, M ;
GOLDEN, DM .
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1979, 11 (07) :775-788