HYDROGEN ION-BEAM INDUCED CHANGES IN THE PHOTOLUMINESCENCE OF GASB ALSB MQW STRUCTURES

被引:4
|
作者
CAPIZZI, M [1 ]
COLUZZA, C [1 ]
FORCHEL, A [1 ]
FROVA, A [1 ]
机构
[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1016/0749-6036(89)90304-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:297 / 299
页数:3
相关论文
共 50 条
  • [1] ION-BEAM INDUCED CHANGES IN ALLOY COMPOSITION
    REHN, LE
    AVERBACK, RS
    WAGNER, W
    WIEDERSICH, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 419 - 419
  • [2] ION-BEAM CRYSTALLOGRAPHY OF THE GASB (110) SURFACE
    SMIT, L
    TROMP, RM
    VANDERVEEN, JF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3): : 322 - 325
  • [3] Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
    Levitskii, Ya, V
    Mitrofanov, M., I
    Voznyuk, G. V.
    Nikolayev, D. N.
    Mizerov, M. N.
    Evtikhiev, V. P.
    SEMICONDUCTORS, 2019, 53 (11) : 1545 - 1549
  • [4] Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
    Ya. V. Levitskii
    M. I. Mitrofanov
    G. V. Voznyuk
    D. N. Nikolayev
    M. N. Mizerov
    V. P. Evtikhiev
    Semiconductors, 2019, 53 : 1545 - 1549
  • [5] Changes of plasma potential induced by ion-beam injection
    Honzawa, T
    Saito, R
    Saitou, Y
    PHYSICS OF PLASMAS, 1996, 3 (01) : 89 - 93
  • [6] Ion-beam induced compositional changes in alloys at elevated temperatures
    Sckerl, MW
    Sigmund, P
    Lam, NQ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 221 - 225
  • [7] ION-BEAM INDUCED CHANGES OF THE REFRACTIVE-INDEX OF PMMA
    BIERSACK, JP
    KALLWEIT, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 309 - 312
  • [8] ION-BEAM INDUCED CHANGES OF THE REFRACTIVE-INDEX OF PMMA
    KALLWEIT, R
    BIERSACK, JP
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (1-2): : 29 - 36
  • [9] Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures
    Pantchev, B.
    Danesh, P.
    Schmidt, B.
    Grambole, D.
    Bischoff, L.
    16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS, 2010, 253
  • [10] Structures and photoluminescence properties of silicon thin films prepared by pulsed ion-beam evaporation
    Zhu, X. P.
    Suematsu, Hisayuki
    Jiang, Weihua
    Yatsui, Kiyoshi
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 149 (01): : 105 - 110