CONDUCTANCE OSCILLATIONS PERIODIC IN THE DENSITY OF A ONE-DIMENSIONAL ELECTRON-GAS

被引：279

作者：

SCOTTTHOMAS, JHF ^{[1
]}

FIELD, SB ^{[1
]}

KASTNER, MA ^{[1
]}

SMITH, HI ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.62.583

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：583 / 586

页数：4

共 13 条

[1]

ALTSHULER BL, 1985, JETP LETT+, V41, P648

[2] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A ;

WEBB, RA .

PHYSICAL REVIEW LETTERS, 1982, 48 (03) :196-199

[3] NONMONOTONIC VARIATIONS OF THE CONDUCTANCE WITH ELECTRON-DENSITY IN APPROXIMATELY 70-NM-WIDE INVERSION-LAYERS [J].

KWASNICK, RF ;

KASTNER, MA ;

MELNGAILIS, J ;

LEE, PA .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :224-227

[4] ELECTRON-STATES IN NARROW GATE-INDUCED CHANNELS IN SI [J].

LAUX, SE ;

STERN, F .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :91-93

[5] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN METALS [J].

LEE, PA ;

STONE, AD .

PHYSICAL REVIEW LETTERS, 1985, 55 (15) :1622-1625

[6] ELECTRIC-FIELD DEPINNING OF CHARGE-DENSITY WAVES [J].

LEE, PA ;

RICE, TM .

PHYSICAL REVIEW B, 1979, 19 (08) :3970-3980

[7]

LEE PA, 1984, PHYS REV LETT, V53, P2024

[8]

PEPPER M, 1982, J PHYS C SOLID STATE, V5, pL617

[9] SI METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH 70-NM SLOTTED GATES FOR STUDY OF QUASI-ONE-DIMENSIONAL QUANTUM TRANSPORT [J].

SCOTTTHOMAS, JHF ;

KASTNER, MA ;

ANTONIADIS, DA ;

SMITH, HI ;

FIELD, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1841-1844

[10] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN SILICON INVERSION-LAYER NANOSTRUCTURES [J].

SKOCPOL, WJ ;

MANKIEWICH, PM ;

HOWARD, RE ;

JACKEL, LD ;

TENNANT, DM ;

STONE, AD .

PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2865-2868

← 1 2 →