HIGH-RESOLUTION AND INSITU INVESTIGATION OF DEFECTS IN BI-IRRADIATED SI

被引：68

作者：

RUAULT, MO ^{[1
]}

CHAUMONT, J ^{[1
]}

PENISSON, JM ^{[1
]}

BOURRET, A ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1984年 / 50卷 / 05期

关键词：

D O I：

10.1080/01418618408237526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：667 / 675

页数：9

共 11 条

[1] DESSEAUXTHIBAUL.J, 1977, THESIS U GRENOBLE
[2] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY
HOWE, LM
RAINVILLE, MH
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 143 - 151
[3] COLLISION CASCADES IN SILICON
HOWE, LM
RAINVILLE, MH
HAUGEN, HK
THOMPSON, DA
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 419 - 425
[4] TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATIONS OF DEFECTS PRODUCED BY INDIVIDUAL DISPLACEMENT CASCADES IN SI AND GE
RUAULT, MO
JAGER, W
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 67 - 73
[5] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ION-IMPLANTATION INDUCED SI AMORPHIZATION
RUAULT, MO
CHAUMONT, J
BERNAS, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 351 - 356
[6] INSITU STUDY OF IMPLANTATION-INDUCED SILICAN AMORPHIZATION
RUAULT, MO
CHAUMONT, J
BERNAS, H
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1746 - 1748
[7] ENERGY DENSITY AND TIME CONSTANT OF HEAVY-ION INDUCED ELASTIC-COLLISION SPIKES IN SOLIDS
SIGMUND, P
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (03) : 169 - 171
[8] HIGH-DENSITY CASCADE EFFECTS
THOMPSON, DA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 56 (3-4): : 105 - 150
[9] RADIATION-INDUCED PROCESSES IN EXPERIMENTS CARRIED OUT INSITU IN THE HIGH-VOLTAGE ELECTRON-MICROSCOPE
URBAN, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 157 - 168
[10] ION DAMAGE TO SILICON-CRYSTALS INSIDE AN ELECTRON-MICROSCOPE
URBAN, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : 213 - 218

← 1 2 →