EXPERIMENTAL STUDY OF ZEEMAN SPLITTING OF BORON LEVELS IN SILICON

被引：28

作者：

MERLET, F ^{[1
]}

PAJOT, B ^{[1
]}

ARCAS, P ^{[1
]}

JEANLOUIS, AM ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, LAB INFRAROUGE, BATIMENT 350, 91405 ORSAY, FRANCE

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3297

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3297 / 3317

页数：21

共 28 条

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539
[2] GROUP-THEORETICAL STUDY OF ZEEMAN EFFECT OF ACCEPTORS IN SILICON AND GERMANIUM
BHATTACHARJEE, AK
RODRIGUEZ, S
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (10): : 3836 - +
[3] SPIN AND COMBINED RESONANCE ON ACCEPTOR CENTRES IN GE AND SI TYPE CRYSTALS .1. PARAMAGNETIC RESONANCE IN STRAINED AND UNSTRAINED CRYSTALS
BIR, GL
PIKUS, GE
BUTIKOV, EI
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1467 - +
[4] THE SPIN HAMILTONIAN OF A GAMMA-QUARTET
BLEANEY, B
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (474): : 939 - 942
[5] QUANTITATIVE PIEZOSPECTROSCOPY OF GROUND AND EXCITED-STATES OF ACCEPTORS IN SILICON
CHANDRAS.HR
FISHER, P
RAMDAS, AK
RODRIGUE.S
[J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3836 - 3851
[6] CHANDRASEKHAR HR, 1974, THESIS PURDUE U
[7] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON
CHERLOW, JM
AGGARWAL, RL
LAX, B
[J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560
[8] INFRARED ABSORPTION LINES IN BORON-DOPED SILICON
COLBOW, K
[J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (11) : 1801 - &
[9] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 713 - &
[10] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON
FEHER, G
HENSEL, JC
GERE, EA
[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311

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