APPARATUS FOR THE EPITAXIAL-GROWTH OF SEMICONDUCTOR COMPOUNDS BY CLOSE-SPACED VAPOR TRANSPORT

被引：8
作者：
LAROCHE, JM
COHENSOLAL, G
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1983年 / 18卷 / 08期
关键词：
D O I：
10.1051/rphysap:01983001808051500
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：515 / 518
页数：4
相关论文
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