DOPANT INCORPORATION DURING EPITAXIAL-GROWTH OF A MULTICOMPONENT OXIDE THIN-FILM FROM VAPOR-PHASE - A CASE-STUDY OF FE/YBA2CU3O(7-DELTA) SYSTEM

被引:6
作者
OGALE, SB
TAKEUCHI, I
RAJESWARI, M
GREENE, RL
VENKATESAN, T
CHOUGHULE, DD
机构
[1] UNIV POONA,CTR ADV STUDIES MAT SCI & SOLID STATE PHYS,DEPT PHYS,POONA,MAHARASHTRA,INDIA
[2] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742
关键词
D O I
10.1063/1.113889
中图分类号
O59 [应用物理学];
学科分类号
摘要
Incorporation of Fe in YBa2Cu3O7-δ matrix during its epitaxial growth on (001) LaAlO3 by pulsed excimer laser ablation is examined. It is shown that oxygen pressure during deposition plays a critical role in the incorporation process and that a low-temperature postsynthesis annealing is essential for complete substitution. Clustering of iron atoms and its control via the anion controlled reactions are identified as the key features in this context. It is also shown by using atomic force microscopy that Fe incorporation influences the surface morphology. These issues are of importance in the formation of cationic defects in multicomponent thin films.© 1995 American Institute of Physics.
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页码:1674 / 1676
页数:3
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