MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE

被引：24

作者：

JOHNSTON, WD ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：494 / 496

页数：3

共 13 条

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[3] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].

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[4] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J].

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[5] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J].

JOHNSTON, WD ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :192-194

[6] OBSERVATION OF DARK-LINE DEGRADATION SITES IN ALGAAS-GAAS DH LASER MATERIAL BY ETCHING AND PHASE-CONTRAST MICROSCOPY [J].

JOHNSTON, WD ;

CALLAHAN, WM ;

MILLER, BI .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :505-507

[7] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J].

LOGAN, RA ;

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SUNDBURG, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1385-1390

[8] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

MILLER, BI ;

CAPIK, RJ ;

HAYASHI, I ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2817-&

[9]

NAKADA O, 1973, P INT C SOLID STATE

[10]

NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2

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