RECOMBINATION-INDUCED DEFECT HEATING AND RELATED PHENOMENA

The theory of recombination-induced heating is presented. The main mechanisms involved in the excitation and relaxation of local vibrations of defects are considered. It is shown that the high-energy 'tail' of the defect distribution function by vibration energies dramatically increases in the presence of excess carriers in semiconductors due to multiphonon recombination via deep defects. An example of numerical calculation of the defect distribution function is given. The theory is used to calculate the rate of recombination-stimulated reactions and to interpret experimental data on inelastic sputtering of solid surfaces by ion bombardment. It is shown that the defect heating should change the non-radiative recombination rate in the case of highly doped semiconductors or large concentrations of excess carriers.