CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING

被引：0

作者：

JIN, SX ^{[1
]}

YUAN, MH ^{[1
]}

WANG, LP ^{[1
]}

SONG, HZ ^{[1
]}

WANG, HP ^{[1
]}

QIN, GG ^{[1
]}

机构：

[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

来源：

SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1994年 / 37卷 / 06期

关键词：

SCHOTTKY BARRIER (SB); METAL-SEMICONDUCTOR (MS) INTERFACES; HYDROGEN; ZERO BIAS ANNEALING (ZBA); REVERSE BIAS ANNEALING (RBA);

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-GaAs diodes containing hydrogen decrease and reverse bias annealing (RBA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or more, the SBHs haw a one-to-one correlation with the biases of RBA and the larger the bias applied, the higher the SBH is.

引用

页码：730 / 737

页数：8

共 2 条

[1] Controlling the Schottky Barrier Height of Ti/n-GaAs Schottky Diode Containing Hydrogen by Biased Annealing
金泗轩
元民华
王兰萍
宋海智
王海萍
秦国刚International Center for Material Physics
Academia Sinica
Shenyang 110015
PRC
and Department of Physics
Peking University
Beijing 100871
Science China Mathematics, 1994, (06) : 730 - 737
[2] The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters
Ozdemir, A. F.
Ozsoy, T.
Kansiz, Y.
Sancak, M.
Kokce, A.
Ucar, N.
Aldemir, D. A.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 60 (01): : 10101-p1 - 10101-p5

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