COMMUTATIVITY AND TRANSITIVITY OF GAAS-ALAS-GE(100) BAND OFFSETS

[1] BACHRACH RZ, COMMUNICATION

[2] III-V COMPOUND DEVICES - FOREWORD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1629 - 1629

[3] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521

[4] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201

[6] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[7] OBSERVATION OF ORIENTATION DEPENDENCE OF INTERFACE DIPOLE ENERGIES IN GE-GAAS [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (10) : 656 - 659

[8] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[9] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956

[10] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156

[1] BACHRACH RZ, COMMUNICATION

[2] III-V COMPOUND DEVICES - FOREWORD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1629 - 1629

[3] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521

[4] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201

[6] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[7] OBSERVATION OF ORIENTATION DEPENDENCE OF INTERFACE DIPOLE ENERGIES IN GE-GAAS [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (10) : 656 - 659

[8] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[9] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956

[10] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156