共 50 条
- [1] COMMUTATIVITY OF THE GAAS/ALAS (100) BAND OFFSET JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 391 - 394
- [2] COMMUTATIVITY OF THE GAAS/ALAS(100) BAND OFFSET PHYSICAL REVIEW B, 1988, 38 (17): : 12764 - 12767
- [3] FAILURE OF THE TRANSITIVITY RULE FOR (GAAS)3/(GE)6(110) AND (ALAS)3/(GE)6(110) SUPERLATTICE VALENCE-BAND OFFSETS PHYSICAL REVIEW B, 1989, 39 (08): : 5116 - 5120
- [5] Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces Appl Surf Sci, (222-226):
- [7] GEOMETRIC STRUCTURE AT THE SI/GAAS(001) INTERFACE - THE RELATIONSHIP TO ALAS/SI/GAAS BAND OFFSETS PHYSICAL REVIEW B, 1993, 47 (19): : 13023 - 13026
- [9] STABILITY AND BAND OFFSETS OF HETEROVALENT SUPERLATTICES - SI/GAP, GE/GAAS, AND SI/GAAS PHYSICAL REVIEW B, 1990, 42 (05): : 3213 - 3216
- [10] Tuning band offsets at the AlAs GaAs interface by group-IV intralayer deposition PHYSICAL REVIEW B, 1999, 59 (19): : 12499 - 12504