MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100)

被引：47
|
作者：
KAWABE, M
UEDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 04期
关键词：
D O I：
10.1143/JJAP.25.L285
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L285 / L287
页数：3
相关论文
共 50 条
  • [21] Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy
    Soshnikov, I. P.
    Cirlin, G. E.
    Tonkikh, A. A.
    Nevedomskii, V. N.
    Samsonenko, Yu. B.
    Ustinov, V. M.
    PHYSICS OF THE SOLID STATE, 2007, 49 (08) : 1440 - 1445
  • [22] MODEL OF GROWTH OF SINGLE-DOMAIN GAAS-LAYERS ON DOUBLE-DOMAIN SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    VARRIO, J
    ASONEN, H
    LAMMASNIEMI, J
    RAKENNUS, K
    PESSA, M
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 1987 - 1989
  • [23] Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxy
    Sakai, S
    Cheng, TS
    Foxon, TC
    Sugahara, T
    Naoi, Y
    Naoi, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 471 - 475
  • [24] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES
    FARRELL, HH
    HARBISON, JP
    PETERSON, LD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1482 - 1489
  • [25] A GAAS ON SI COPLANAR TECHNOLOGY BY EMBEDDED MOLECULAR-BEAM EPITAXY
    LIANG, JB
    DEBOECK, J
    MERTENS, R
    BORGHS, G
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 701 - 704
  • [26] HIGHLY DOPED GAAS-SI BY MOLECULAR-BEAM EPITAXY
    SACKS, R
    SHEN, H
    APPLIED PHYSICS LETTERS, 1985, 47 (04) : 374 - 376
  • [27] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
    BERNIER, G
    BEERENS, J
    DEBOECK, J
    DENEFFE, K
    VANHOOF, C
    BORGHS, G
    SOLID STATE COMMUNICATIONS, 1989, 69 (07) : 727 - 731
  • [28] Molecular-beam epitaxy of Ge on GaAs(001) and Si capping
    Goldfarb, I
    Azar, JL
    Grisaru, A
    Grunbaum, E
    Nathan, M
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 3057 - 3062
  • [29] ATOMIC LAYER EPITAXY OF ZNSE ON GAAS(100) BY METALORGANIC MOLECULAR-BEAM EPITAXY
    KIMURA, R
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 283 - 288
  • [30] GROWTH OF SINGLE DOMAIN GaAs ON 2-INCH Si(100) SUBSTRATE BY MOLECULAR BEAM EPITAXY.
    Nishi, Seiji
    Inomata, Hiroki
    Akiyama, Masahiro
    Kaminishi, Katsuzo
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (06): : 391 - 393
12345