PARAMAGNETIC-RESONANCE OF A NEW-OXYGEN-DONOR RELATED CENTER IN SILICON

[1] PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3419 - 3424

[2] BERGHOLZ W, 1986, SEMICONDUCTOR SILICO, P874

[3] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836

[4] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[5] TRAP SPECTRUM OF THE NEW OXYGEN DONOR IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 155 - 161

[6] LEE KM, 1985, MRS S P, V46

[7] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990

[8] PENSL G, COMMUNICATION

[9] ELECTRON-SPIN RESONANCE STUDY OF OXYGEN DONORS IN SILICON-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6594 - 6600

[10] [No title captured]

[1] PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3419 - 3424

[2] BERGHOLZ W, 1986, SEMICONDUCTOR SILICO, P874

[3] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836

[4] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[5] TRAP SPECTRUM OF THE NEW OXYGEN DONOR IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 155 - 161

[6] LEE KM, 1985, MRS S P, V46

[7] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990

[8] PENSL G, COMMUNICATION

[9] ELECTRON-SPIN RESONANCE STUDY OF OXYGEN DONORS IN SILICON-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6594 - 6600

[10] [No title captured]