EPITAXIAL-GROWTH OF FESI2 IN FE THIN-FILMS ON SI WITH A THIN INTERPOSING NI LAYER

被引：23

作者：

CHENG, HC ^{[1
]}

YEW, TR ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：128 / 130

页数：3

共 14 条

[1] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON [J].

CHENG, HC ;

YEW, TR ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5246-5250

[2] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J].

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :562-564

[3] EPITAXIAL-GROWTH OF VSI2 ON (111)SI [J].

CHIEN, CJ ;

CHENG, HC ;

NIEH, CW ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1887-1889

[4] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :924-929

[5]

HANSEN M, 1958, CONSTITUTION BINARY, P677

[6]

Ishiwara H., 1980, P S THIN FILM INT I, P159

[7] LOCALIZED EPITAXIAL-GROWTH OF HEXAGONAL AND TETRAGONAL MOSI2 ON (111) SI [J].

LIN, WT ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1061-1063

[8] CRYSTALLINE SEMICONDUCTOR HETEROSTRUCTURES [J].

NARAYANAMURTI, V .

PHYSICS TODAY, 1984, 37 (10) :24-32

[9]

NICOLET MA, 1983, MATERIALS PROCESS CH, P329

[10]

PEARSON WB, 1972, CRYSTAL CHEM PHYSICS

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