PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS

被引：41

作者：

MAKITA, Y

NOMURA, T

YOKOTA, M

MATSUMORI, T

IZUMI, T

TAKEUCHI, Y

KUDO, K

机构：

[1] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[2] MATSUSHITA ELECT IND CO LTD,TAMA KU,KAWASAKI 214,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：623 / 625

页数：3

共 8 条

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[4]

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[6] NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS [J].

MAKITA, Y ;

YOKOTA, M ;

NOMURA, T ;

TANOUE, H ;

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IZUMI, T ;

MATSUMORI, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :433-437

[7] STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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STURGE, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :427-429

[8] PHOTO-LUMINESCENCE OF CARBON-IMPLANTED GAAS [J].

STRINGFELLOW, GB ;

KOSCHEL, W ;

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PATTERSON, G .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :581-582

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