DOUBLE HETEROJUNCTION GAAS-GAALAS I2L INVERTER

被引：9
|
作者：
NAROZNY, P
BENEKING, H
机构：
[1] RWTH, Inst of Semiconductor, Electronics, Aachen, West Ger, RWTH, Inst of Semiconductor Electronics, Aachen, West Ger
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 08期
关键词：
LOGIC CIRCUITS; INTEGRATED INJECTION - TRANSISTORS; BIPOLAR; -; Heterojunctions;
D O I：
10.1049/el:19850232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs/GaAlAs double heterojunction I**2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.
引用
收藏
页码：328 / 329
页数：2
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