SCREENING AND CARRIER BUNCHING IN 3-V COMPOUNDS

被引:2
作者
QUEISSER, HJ
机构
来源
PHYSICS LETTERS | 1965年 / 18卷 / 02期
关键词
D O I
10.1016/0031-9163(65)90661-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:94 / &
相关论文
共 50 条
[31]   IMPURITY AND EXCITON EFFECTS ON INFRARED ABSORPTION EDGES OF 3-V COMPOUNDS [J].
JOHNSON, EJ ;
FAN, HY .
PHYSICAL REVIEW, 1965, 139 (6A) :1991-&
[33]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 2. INAS [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (04) :471-&
[34]   AUGER SPECTRA OF ELEMENTARY CONSTITUENTS OF 3-V AND 2-6 COMPOUNDS [J].
OSWALD, RC ;
WEBER, RE .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (07) :792-&
[36]   WILLARDSON,RK - SEMICONDUCTORS AND SEMI-METALS - PHYSICS OF 3-V COMPOUNDS [J].
HILSUM, C .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (05) :682-&
[37]   WILLARDSON,RK - SEMICONDUCTORS AND SEMI-METALS - PHYSICS OF 3-V COMPOUNDS [J].
YOFFE, AD .
TRANSACTIONS OF THE FARADAY SOCIETY, 1967, 63 (539P) :2848-&
[38]   A 3-V GSM baseband transmitter [J].
Wong, CS .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (05) :725-730
[39]   IMPORTANCE OF 3-V MACROCELL ACCURACY [J].
HARRINGTON, J .
COMPUTER DESIGN, 1993, 32 (04) :82-82
[40]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&