THERMAL AND ELECTRON-BEAM-INDUCED REACTION OF DISILANE ON SI(100)-(2X1)

被引：75

作者：

BOZSO, F

AVOURIS, P

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.38.3943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3943 / 3947

页数：5

共 20 条

[1]

APPELBEAUM JA, 1978, SURF SCI, V70, P645

[2] THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].

AVOURIS, P ;

BOZSO, F ;

HAMERS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392

[3] PHOTOELECTRON-SPECTRA AND MOLECULAR-PROPERTIES .51. IONIZATION-POTENTIALS OF SILANES SINH2N+2 [J].

BOCK, H ;

ENSSLIN, W ;

FEHER, F ;

FREUND, R .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1976, 98 (03) :668-674

[4] PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW B, 1988, 38 (06) :3937-3942

[5] CHEMISORPTION OF HYDROGEN ON THE SI(100) SURFACE - MONOHYDRIDE AND DIHYDRIDE PHASES [J].

CIRACI, S ;

BUTZ, R ;

OELLIG, EM ;

WAGNER, H .

PHYSICAL REVIEW B, 1984, 30 (02) :711-720

[6] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2757-2765

[7]

Gates S. J., COMMUNICATION

[8] ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE [J].

GATES, SM .

SURFACE SCIENCE, 1988, 195 (1-2) :307-329

[9]

GROSSMANN HJ, 1985, PHYS REV B, V32, P6

[10] HYDROGEN DESORPTION-KINETICS FROM MONOHYDRIDE AND DIHYDRIDE SPECIES ON SILICON SURFACES [J].

GUPTA, P ;

COLVIN, VL ;

GEORGE, SM .

PHYSICAL REVIEW B, 1988, 37 (14) :8234-8243

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