ELECTRONIC-STRUCTURE AND MOSSBAUER ISOMER-SHIFTS OF SN-119 DEFECTS IN SEMICONDUCTORS

被引：1

作者：

ANTONCIK, E

机构：

来源：

HYPERFINE INTERACTIONS | 1983年 / 15卷 / 1-4期

关键词：

D O I：

10.1007/BF02159793

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：471 / 474

页数：4

共 50 条

[1] THEORETICAL INVESTIGATION OF THE ISOMER-SHIFTS OF THE SN-119 MOSSBAUER ISOTOPE
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[9] ELECTRONIC-STRUCTURE, MAGNETIC-PROPERTIES, AND MOSSBAUER ISOMER-SHIFTS OF FE AND TIFE ALLOYS
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[10] COMPLEXES OF ORGANOMETALLIC COMPOUNDS .52. SN-119 MOSSBAUER ISOMER-SHIFTS, PARTIAL ATOMIC CHARGES ON TIN, AND STRUCTURE, IN TRIORGANOTIN(IV) HALIDES
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