ELECTRONIC-STRUCTURE AND MOSSBAUER ISOMER-SHIFTS OF SN-119 DEFECTS IN SEMICONDUCTORS

被引：1
作者：
ANTONCIK, E
机构：
来源：
HYPERFINE INTERACTIONS | 1983年 / 15卷 / 1-4期
关键词：
D O I：
10.1007/BF02159793
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
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页码：471 / 474
页数：4
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