DETERMINATION OF THE SI(111) 1X1 STRUCTURE AT HIGH-TEMPERATURE BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：87

作者：

KOHMOTO, S

ICHIMIYA, A

机构：

来源：

SURFACE SCIENCE | 1989年 / 223卷 / 03期

关键词：

D O I：

10.1016/0039-6028(89)90669-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：400 / 412

页数：13

相关论文

共 36 条

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[6] OBSERVATION AND STRUCTURAL DETERMINATION OF (SQUARE-ROOT-3 X SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTION OF THE SI(111) SURFACE
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[7] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE
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[8] OBSERVATION OF PHASE-TRANSITIONS ON THE (111) AND (100) SURFACES OF SI NEAR 1000-K WITH HE ATOM DIFFRACTION
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[J]. JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (01) : 571 - 576
[9] RHEED INTENSITY ANALYSIS OF SI(111)7X7 AND 3-SQUARE-ROOT X 3-SQUARE-ROOT-AG SURFACES .1. KINEMATIC DIFFRACTION APPROACH
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[J]. SURFACE SCIENCE, 1983, 133 (2-3) : 393 - 400
[10] ANALYTICAL FORMULA OF IMAGINARY CRYSTAL-POTENTIAL FOR FAST ELECTRONS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11): : 1579 - 1580

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