EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS

[1] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4714 - 4722

[2] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 507 - 510

[3] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[4] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3871 - 3877

[5] LUMINESCENCE STUDIES OF OPTICALLY PUMPED QUANTUM WELLS IN GAAS-ALXGA1-XAS MULTILAYER STRUCTURES [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 863 - 871

[6] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1134 - 1136

[7] PARTIAL DISLOCATIONS, COLUMNAR GROWTH, CLUSTERING, AND PINHOLE FORMATION IN ULTRATHIN FILM SEMICONDUCTOR HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 545 - 550

[8] INTRINSIC RADIATIVE RECOMBINATION FROM QUANTUM STATES IN GAAS-A-LAMBDA-XGA1-XAS MULTI-QUANTUM WELL STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 219 - 222

[9] Weisbuch C., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P711

[10] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1727 - &

[1] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4714 - 4722

[2] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 507 - 510

[3] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[4] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3871 - 3877

[5] LUMINESCENCE STUDIES OF OPTICALLY PUMPED QUANTUM WELLS IN GAAS-ALXGA1-XAS MULTILAYER STRUCTURES [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 863 - 871

[6] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1134 - 1136

[7] PARTIAL DISLOCATIONS, COLUMNAR GROWTH, CLUSTERING, AND PINHOLE FORMATION IN ULTRATHIN FILM SEMICONDUCTOR HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 545 - 550

[8] INTRINSIC RADIATIVE RECOMBINATION FROM QUANTUM STATES IN GAAS-A-LAMBDA-XGA1-XAS MULTI-QUANTUM WELL STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 219 - 222

[9] Weisbuch C., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P711

[10] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1727 - &