STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：138
作者：
GUO, JD
FENG, MS
GUO, RJ
PAN, FM
CHANG, CY
机构：
[1] NATL NANO DEVICE LAB,HSINCHU 30049,TAIWAN
[2] NATL CHIAO TUNG UNIV,INST MAT SCI & ENGN,HSINCHU 30049,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期
关键词：
D O I：
10.1063/1.114327
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1X10(-6) Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. (C) 1995 American Institute of Physics.
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页码：2657 / 2659
页数：3
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