INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION AND HEAT-TREATMENT ON FORMATION OF SWIRL TYPE DEFECTS IN CZOCHRALSKI-GROWN SILICON

被引：0

作者：

LIAW, HM ^{[1
]}

RAVI, KV ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85003

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：856 / 856

页数：1

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