INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION AND HEAT-TREATMENT ON FORMATION OF SWIRL TYPE DEFECTS IN CZOCHRALSKI-GROWN SILICON

被引：0
|
作者：
LIAW, HM [1 ]
RAVI, KV [1 ]
机构：
[1] MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85003
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：856 / 856
页数：1
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