THE PREPARATION OF LITHIUM-DRIFTED SEMICONDUCTOR NUCLEAR PARTICLE DETECTORS

被引：17
作者：
AMMERLAAN, CAJ
MULDER, K
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1963年 / 21卷 / 01期
关键词：
D O I：
10.1016/0029-554X(63)90093-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：97 / 100
页数：4
相关论文
共 16 条
[1]   EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J].
BACKENSTOSS, G .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710
[2]   THE SEMICONDUCTOR SURFACE BARRIER FOR NUCLEAR PARTICLE DETECTION [J].
DEARNALEY, G ;
WHITEHEAD, AB .
NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02) :205-226
[3]   THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT [J].
ELLIOTT, JH .
NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (01) :60-66
[4]   MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].
FULLER, CS ;
SEVERIENS, JC .
PHYSICAL REVIEW, 1954, 96 (01) :21-24
[5]  
FULLER SC, 1953, PHYS REV, V91, P193
[6]   DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J].
LAWRENCE, H ;
WARNER, RM .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02) :389-403
[7]  
MAYER JW, 1961, MAY C NUCL EL BELGR
[8]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[9]   DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT [J].
PELL, EM .
PHYSICAL REVIEW, 1960, 119 (03) :1014-1021
[10]   STUDY OF LI-O INTERACTION IN SI BY ION DRIFT [J].
PELL, EM .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1048-&
12