ACTIVATION-ENERGIES OF FORMATION AND DIFFUSION OF AS VACANCY IN GAAS MEASURED BY PHOTOLUMINESCENCE

被引：5

作者：

LIN, MS ^{[1
]}

GAMO, K ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,OSAKA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.14.1839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1839 / 1840

页数：2

共 6 条

[1] Annealing of damage in ion implanted gallium arsenide
HARRIS JS
EISEN FH
[J]. Radiation Effects, 1971, 7 (1-2): : 123 - 128
[2] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P189
[3] LIN MS, 1974, ELECTRON ION BEAM SC, P226
[4] STUDIES OF VAPORIZATION MECHANISM OF GALLIUM ARSENIDE SINGLE CRYSTALS
LOU, CY
SOMORJAI, GA
[J]. JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (09) : 4554 - &
[5] MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188
[6] ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE
POTTS, HR
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2098 - &