CONDUCTIVITY AND NOISE IN THIN-FILMS OF NONHYDROGENATED AMORPHOUS-SILICON IN THE HOPPING REGIME

被引：17

作者：

DAMICO, A ^{[1
]}

FORTUNATO, G ^{[1
]}

VANVLIET, CM ^{[1
]}

机构：

[1] UNIV MONTREAL,CTR RECH MATH,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期

关键词：

D O I：

10.1016/0038-1101(85)90072-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：837 / 844

页数：8

相关论文

共 16 条

[1] BISCHOP J, 1984, THESIS EINDHOVEN
[2] BRODSKY MH, 1972, J NONCRYSTALLINE SOL, V10, P739
[3] GENERATION OF DANGLING BONDS BY HIGH-TEMPERATURE ANNEALING AND HOPPING CONDUCTION IN AMORPHOUS-SILICON FILMS
CHIK, KP
FENG, SY
POON, SK
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1019 - 1023
[4] QUANTUM APPROACH TO 1-F NOISE
HANDEL, PH
[J]. PHYSICAL REVIEW A, 1980, 22 (02): : 745 - 757
[5] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY
HAUSER, JJ
[J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3817 - 3823
[6] 1/F NOISE IS NO SURFACE EFFECT
HOOGE, FN
[J]. PHYSICS LETTERS A, 1969, A 29 (03) : 139 - &
[7] THICKNESS DEPENDENCE OF HOPPING TRANSPORT IN AMORPHOUS-GE FILMS
KNOTEK, ML
POLLAK, M
DONOVAN, TM
KURTZMAN, H
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (18) : 853 - 856
[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[9] Mott N. F., 1979, ELECT PROCESSES NONC
[10] NAGELS P, 1979, AMORPHOUS SEMICONDUC, P125