GROWTH OF MATCHED METALLIC ERP0.6AS0.4 LAYERS ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM

被引：25
作者：
LECORRE, A
CAULET, J
GUIVARCH, A
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期
关键词：
D O I：
10.1063/1.102043
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2298 / 2300
页数：3
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