CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES

被引：42
作者：
KIRCHER, CJ [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 12期
关键词：
D O I：
10.1063/1.322568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5394 / 5399
页数：6
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共 15 条
[1]   SILICON PROCESS TECHNOLOGY FOR MONOLITHIC MEMORY [J].
COLLINS, RH ;
GROCHOWSKI, EG ;
NORTH, WD .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1972, 16 (01) :2-+
[2]   COMMENT ON PAPTER FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS [J].
CUNNINGHAM, JA ;
WAKEFIELD, RH .
MICROELECTRONICS RELIABILITY, 1970, 9 (06) :515-+
[3]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[4]   ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].
HOSACK, HH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485
[5]   METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].
KIRCHER, CJ .
SOLID-STATE ELECTRONICS, 1971, 14 (06) :507-+
[6]   COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS [J].
KIRCHER, CJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2167-2173
[7]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
[8]   FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS [J].
MCCARTHY, J .
MICROELECTRONICS RELIABILITY, 1970, 9 (02) :187-&
[9]   BEHAVIOR OF VARIOUS SILICON SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J].
PAREKH, PC ;
SIRRINE, RC ;
LEMIEUX, P .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :493-494
[10]   SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].
SANKUR, H ;
MCCALDIN, JO ;
DEVANEY, J .
APPLIED PHYSICS LETTERS, 1973, 22 (02) :64-66
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