HIGH OUTPUT POWER GAINASP-INP SUPERLUMINESCENT DIODE AT 1.3 MU-M

被引：10
作者：
KASHIMA, Y
KOBAYASHI, M
TAKANO, H
机构：
[1] Oki Electric Industry Co Ltd, Japan
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 24期
关键词：
Luminescence - Semiconducting Gallium Compounds;
D O I：
10.1049/el:19881029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a 1.3 μm superluminescent diode using a revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0-50°C, and the coupled power into a single-mode fiber reached 1 mw.
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页码：1507 / 1508
页数：2
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