LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES

被引：31

作者：

DONNELLY, JP ^{[1
]}

BOZLER, CO ^{[1
]}

LINDLEY, WT ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1101(77)90198-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / 276

页数：4

共 12 条

[1] HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES [J].

BOZLER, CO ;

DONNELLY, JP ;

MURPHY, RA ;

LATON, RW ;

SUDBURY, RW ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :123-125

[2] IMPURITY GETTERING IN SEMI-INSULATING GALLIUM-ARSENIDE USING ION-IMPLANTATION DAMAGE [J].

BOZLER, CO ;

DONNELLY, JP ;

LINDLEY, WT ;

REYNOLDS, RA .

APPLIED PHYSICS LETTERS, 1976, 29 (11) :698-699

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[4]

EISEN FH, 1976, APPLICATIONS ION BEA, P44

[5]

HIGGINS JA, 1976, ELECTRON LETT, V12, P18

[6]

HIGGINS JA, TO BE PUBLISHED

[7] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

HUNSPERGER, RG ;

HIRSCH, N .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :349-353

[8]

KELLER W, 1975, 1975 INT EL DEV M TE, P187

[9]

Ladd G. O. Jr., 1976, 1976 IEEE International Solid-State Circuits Conference. (Digest of technical papers)

[10]

MIZUNTANI T, 1975, ELECTRON LETT, V11, P639

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