SOME PROPERTIES OF SEMI-INSULATING AND SI-IMPLANTED GAAS

被引：13

作者：

BHATTACHARYA, PK ^{[1
]}

RHEE, JK ^{[1
]}

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1149/1.2115769

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1152 / 1159

页数：8

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[2]

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[10] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS [J].

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