ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE

被引：113

作者：

POTTS, HR

PEARSON, GL

机构：

来源：

关键词：

D O I：

10.1063/1.1708715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2098 / &

共 12 条

[1] ANNEALING OF ELECTRON-IRRADIATED GAAS [J].

AUKERMAN, LW ;

GRAFT, RD .

PHYSICAL REVIEW, 1962, 127 (05) :1576-&

BENNEMAN, KH .

PHYSICAL REVIEW, 1965, 137 (5A) :1497-+

[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

[4] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[5]

KROGER FA, 1964, CHEMISTRY IMPERFECT

[6]

PEARSON GL, 1965, 7 P INT C PHYS SEM D, P197

[7]

POTTS HR, 1964, SUSEL64075 STANF EL

[8] DIFFUSION-CONTROLLED REACTIONS IN SOLIDS [J].

REISS, H .

SWALIN, RA .

[10]

SWALIN RA, 1962, THERMODYNAMICS SOLID, P214