PLANAR BURIED HETEROSTRUCTURE INP GAINAS LASERS GROWN ENTIRELY BY OMVPE

被引：28
作者：
MILLER, BI
KOREN, U
CAPIK, RJ
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 18期
关键词：
D O I：
10.1049/el:19860646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：947 / 949
页数：3
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