SOME RECENT FUNDAMENTAL ADVANCES IN RADIATIVE AND NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS

被引：10

作者：

HENRY, CH ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF LUMINESCENCE | 1976年 / 12卷 / 01期

关键词：

D O I：

10.1016/0022-2313(76)90064-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：47 / 56

页数：10

共 31 条

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[8] CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[9] INDEX DISPERSION ABOVE FUNDAMENTAL BAND EDGE IN NITROGEN-DOPED GAAS1-YPY (Y=0.38, EN GREATER-THAN E GAMMA)
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[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (26) : 1566 - 1569
[10] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP
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