GROWTH AND PROPERTIES OF SILICON FILMS ON ALUMINUM-NITRIDE FILMS ON SAPPHIRE

被引：4

作者：

WANG, KL ^{[1
]}

LAKIN, KM ^{[1
]}

LIU, JK ^{[1
]}

机构：

[1] UNIV SO CALIF,ELECT SCI LAB,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1580 / 1582

页数：3

共 11 条

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[3]

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[5] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

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ERDMANN, FM ;

SIMPSON, WI .

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[6]

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[7]

Pearson W.B., 1967, HDB LATTICE SPACINGS

[8] EFFECTS OF OXIDATION ON ELECTRICAL CHARACTERISTICS OF SILICON-ON-SAPPHIRE FILMS [J].

ROSS, EC ;

WARFIELD, G .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2339-&

[9] MECHANICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SILICON FILMS ON SPINEL [J].

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :947-+

[10] SOME PROPERTIES OF ALUMINUM NITRIDE [J].

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LENIE, C .

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